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Chemical profiling of silicon nitride structuresX ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and scanning electron microscopy (SEM) were used to study structural and chemical inhomogeneities in several electronic materials and device structures of relevance to radiation hard electronics. The systems studied include metal nitride oxide semiconductor (MNOS) structures, silicon oxynitride (SiO(x)N(y)) formed by the thermal nitridation of SiO2, and semiconductor on insulator (SOI) structures. Studies of MNOS structures suggest that the effect of H2 annealing is to make the Si3N4/SiO2 interface less abrupt by causing interdiffusion of silanol and silamine groups with subsequent oxynitride formation. Another effect of the annealing appears to be to relieve the strain at the SiO2/Si interface.
Document ID
19900007591
Acquisition Source
Legacy CDMS
Document Type
Contractor or Grantee Report
Authors
Vasquez, R. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
June 1, 1989
Subject Category
Inorganic And Physical Chemistry
Report/Patent Number
AD-A215643
RADC-TR-89-75
Accession Number
90N16907
Funding Number(s)
PROJECT: AF PROJ. 2306
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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