Responsivity of silicon photodiodes from 0.5 to 1.1 micron at 77 K

The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR Mapping Spectrometer (VIMS). Quantitative responsivity data for Si photodiodes in the band from 0.5 to 1.1 were needed for the VIMS system analysis. The results show that the Si array for the focal plane should have two different antireflection coatings. It is found that the Si and InSb materials have equivalent quantum efficiencies at about 0.9 microns. Because of unknown signal chain complications that could be caused by a multiplexer accessing two different capacitances, the focal plane was designed with a change from Si to InSb at 1 micron.