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High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substratesA high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.
Document ID
19900024428
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kim, Jae-Hoon
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lang, Robert J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Radhakrishnan, Gouri
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Katz, Joseph
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Narayanan, Authi A.
(Hughes Research Laboratories Malibu, CA, United States)
Date Acquired
August 14, 2013
Publication Date
October 9, 1989
Publication Information
Publication: Applied Physics Letters
Volume: 55
ISSN: 0003-6951
Subject Category
Lasers And Masers
Accession Number
90A11483
Distribution Limits
Public
Copyright
Other

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