NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Properties of undoped and manganese-doped InGaAsP grown by liquid phase electroepitaxyUndoped and manganese-doped InGaAsP epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxy technique. The dependence of growth velocity on current density for both undoped and doped layers has been studied. Layers of good surface morphology with hole concentrations in the range from 8 x 10 to the 16th to 4 x 10 to the 18th/cu cm have been achieved. The activation energy of the manganese acceptor level was estimated to vary from 57 to 32 meV with increasing hole concentration. The temperature dependence of carrier mobility data was analyzed in terms of different scattering mechanisms and the values of acceptor and donor densities determined were compared with those obtained from the temperature variation of Hall concentration data. Dependences of photoluminescence peak energy and intensity on the temperature and incident excitation levels have been investigated.
Document ID
19900029232
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Iyer, Shanthi N.
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Abul-Fadl, Ali
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Collis, Ward J.
(North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Khorrami, Mohammad N.
(North Carolina Agricultural and Technical State University Greensboro, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1988
Publication Information
Publication: Thin Solid Films
Volume: 163
ISSN: 0040-6090
Subject Category
Solid-State Physics
Accession Number
90A16287
Funding Number(s)
CONTRACT_GRANT: NSG-1390
CONTRACT_GRANT: DAAG29-84-G-0003
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available