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Variation in SEU sensitivity of dose-imprinted CMOS SRAMsThe authors report on an experimental study of dose-induced changes in SEU (single-event-upset) sensitivity of CMOS static RAMs. Two time regimes were investigated following exposure of memories to cobalt-60 gamma rays: the near term, within a few hours after exposure, and the long term, after many days. Samples were irradiated both at room and at liquid nitrogen temperatures. The latter procedure was used in order to freeze in the damage state until SEU measurements could be made prior to annealing. Results show that memories damaged by dose are more sensitive to upsets by heavy ions. The induced changes are substantial: threshold linear energy transfer (LET) values decreased by as much as 46 percent and asymptotic cross sections increased by factors of two to four (unannealed samples).
Document ID
19900038497
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Stassinopoulos, E. G.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Brucker, G. J.
(General Electric Co., Astro-Space Div., Princeton NJ, United States)
Van Gunten, O.
(Maryland, University College Park, United States)
Kim, H. S.
(Science Systems and Applications, Inc. Seabrook, MD, United States)
Date Acquired
August 14, 2013
Publication Date
December 1, 1989
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 36
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
90A25552
Distribution Limits
Public
Copyright
Other

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