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Nitriding kinetics of Si-SiC powder mixtures as simulations of reaction bonded Si3N4-SiC compositesThe nitriding kinetics of Si and Si plus SiC powder mixtures were studied to simulate the fabrication of RBSN-SiC ceramic matrix composites. Very clean, assynthesized, and solvent-exposed powders were studied; C-rich and Si-rich SiC 0.04-0.05 micron diameter powders were mixed in varying concentrations with SiH4-derived 0.2-0.3 micron diameter Si powder. Complete nitridation is achieved with C-rich SiC powders in 140 min at 1250 C, and in the centers of Si-rich SiC powders in 15 min. The effects on the incubation periods, fast reaction periods, and slow reaction periods that characterize these nitriding processes were studied to explain unusual reverse reaction gradients and other effects of contamination.
Document ID
19900040021
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Lightfoot, A.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Sheldon, B. W.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Flint, J. H.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Haggerty, J. S.
(MIT Cambridge, MA, United States)
Date Acquired
August 14, 2013
Publication Date
October 1, 1989
Publication Information
Publication: Ceramic Engineering and Science Proceedings
Volume: 10
ISSN: 0196-6219
Subject Category
Composite Materials
Accession Number
90A27076
Funding Number(s)
CONTRACT_GRANT: NAG3-845
Distribution Limits
Public
Copyright
Other

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