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Analysis of the pyrolysis products of dimethyldichlorosilane in the chemical vapor deposition of silicon carbide in argonA study of the products and reactions occurring during the chemical vapor deposition of silicon carbide from dimethyldichlorosilane in argon is presented. Reaction conditions were as follows: 700 to 1100 C, a contact time of about 1 min, and a pressure of 1 atm. At these conditions, the gases that formed were mainly methane, hydrogen, silicon tetrachloride, trichlorosilane, and methyltrichlorosilane. The silicon carbide solid that formed showed the presence of hydrogen and chloride as impurities, which might degrade the silicon carbide properties. These impurities were eliminated slowly, even at 1100 C, forming hydrogen, trichlorosilane, and silicon tetrachloride.
Document ID
19900040613
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Cagliostro, Domenick E.
(NASA Ames Research Center Moffett Field, CA, United States)
Riccitiello, Salvatore R.
(NASA Ames Research Center Moffett Field, CA, United States)
Carswell, Marty G.
(San Jose State University CA, United States)
Date Acquired
August 14, 2013
Publication Date
March 1, 1990
Publication Information
Publication: American Ceramic Society, Journal
Volume: 73
ISSN: 0002-7820
Subject Category
Chemistry And Materials (General)
Accession Number
90A27668
Distribution Limits
Public
Copyright
Other

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