Electron cyclotron resonance deposition of a-Si:H and a-C:H filmsAmorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films have been deposited by electron cyclotron resonance (ECR) microwave plasma enhanced CVD. A high deposition rate of 25 A/sec and a light-to-dark conductivity ratio of 500,000 for a-Si:H films have been achieved by the ECR process using a pure silane plasma. ECR microwave plasmas have been analyzed by in situ optical emission spectroscopy (OES) and have shown a strong H-asterisk emission at 434 nm indicating higher chemical reactivity than RF plasmas. The linear correlation between the film deposition rate and the SiH-asterisk emission intensity of ECR silane plasma suggests that SiH-asterisk species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without RF bias power, respectively. The RF bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR deposited a-C:H films. Raman spectra of these films indicate that ECR deposition conditions can be optimized to produce diamond films.
Document ID
19900041030
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Shing, Y. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Yang, C. L. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Allevato, C. E. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)