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Electron cyclotron resonance deposition and plasma diagnostics of a-Si:H and a-C:H filmsAmorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films deposited by electron cyclotron resonance (ECR) microwave plasma-enhanced chemical vapor deposition are discussed. It is shown that the ECR microwave plasma deposition technique can produce a-Si:H films with material qualities similar to and with a deposition rate one order of magnitude higher than for films deposited by radio-frequency glow discharge. The ECR-deposited a-C:H films are characterized by fluorescence, IR, and Raman spectroscopy. In situ optical emission spectroscopy plasma diagnostics indicates that ECR plasmas have a strong emission at 434 nm, which indicates a higher chemical reactivity than radio-frequency glow discharge plasmas. The radio frequency bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR-deposited a-C:H films.
Document ID
19900046264
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Shing, Y. H.
(JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Publication Information
Publication: Solar Cells
Volume: 27
ISSN: 0379-6787
Subject Category
Nonmetallic Materials
Accession Number
90A33319
Distribution Limits
Public
Copyright
Other

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