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Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETsA rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.
Document ID
19900046670
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Biedenbender, M. D.
(Cincinnati Univ. OH, United States)
Kapoor, V. J.
(Cincinnati, University OH, United States)
Date Acquired
August 14, 2013
Publication Date
May 1, 1990
Publication Information
Publication: Electrochemical Society, Journal
Volume: 137
ISSN: 0013-4651
Subject Category
Electronics And Electrical Engineering
Accession Number
90A33725
Distribution Limits
Public
Copyright
Other

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