Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector

GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry-Perot laser cleaved from the same wafer. An 11-percent reduction in threshold current and a reduction of the far-field angle from 4.4 deg to 0.7 deg was measured.