Modeling of the SiC chemical vapor deposition process and comparison with experimental results

A model of the NASA Lewis SiC CVD process is described, and the results presented. A key feature of the model is the direct coupling of gas-phase chemical kinetics with diffusion. A deposition chemistry model using reactive sticking coefficients for each gas-phase species provides the diffusion boundary conditions. SiC deposition rates predicted by the model agree reasonably well with experimentally observed rates.