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MCTs and IGBTs - A comparison of performance in power electronic circuitsThere is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.
Document ID
19900049848
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Sul, S. K.
(Wisconsin Univ. Madison, WI, United States)
Profumo, F.
(Wisconsin Univ. Madison, WI, United States)
Cho, G. H.
(Wisconsin Univ. Madison, WI, United States)
Lipo, T. A.
(Wisconsin, University Madison, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: PESC ''89 - Annual IEEE Power Electronics Specialists Conference
Location: Milwaukee, WI
Country: United States
Start Date: June 26, 1989
End Date: June 29, 1989
Sponsors: IEEE
Accession Number
90A36903
Distribution Limits
Public
Copyright
Other

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