NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Multiple doping of silicon-germanium alloys for thermoelectric applicationsIt is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.
Document ID
19900051083
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Fleurial, Jean-Pierre
Vining, Cronin B.
Borshchevsky, Alex
(JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Subject Category
Solid-State Physics
Meeting Information
Meeting: IECEC-89
Location: Washington, DC
Country: United States
Start Date: August 6, 1989
End Date: August 11, 1989
Accession Number
90A38138
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available