High-efficiency heteroepitaxial solar cells for space power applications

The experimental results for several technical approaches aimed at achieving highly efficient solar cells for space-power applications are reported. Efficiencies of up to 24.5 percent (170X, AM0) and 21.7 percent (1X, AM0) have been achieved with homoepitaxial GaAs p/n cells. This one-sun AM0 efficiency value is believed to be the highest reported to date. Tandem solar cells utilizing GaAs-on-Ge structures have been fabricated and shown to have efficiencies up to 21.3 percent (1X, AM0), and a GaAs-on-Si cell at 15.2 percent (1X, AM0) is reported. Homoepitaxial n/p InP cells with an efficiency of 18.8 percent (1X, AM0) are also reported. The fabrication of heteroepitaxial InP solar cells with one-sun AM0 efficiency values of 9.4 percent (on GaAs) and 7.2 percent (on Si) is described.