Thermal annealing of GaAs concentrator solar cellsThe thermal annealing of GaAs concentrator cells after electron irradiation is reported. Results are given for cells annealed at 150, 200, and 250 C. Isochronal annealing was done for 20 min intervals up to 350 C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3 x 10 to the 15th or 1 x 10 to the 16th e/sq cm recover to similar unannealed fractions. Significant annealing is seen starting at 150 C, although very long times are required.
Document ID
19900051095
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Curtis, H. B. (NASA Lewis Research Center Cleveland, OH, United States)
Brinker, D. J. (NASA Lewis Research Center Cleveland, OH, United States)