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Growth and characterization of CdTe on GaAs/Si substratesEpitaxial CdTe has been grown on both (100) GaAs/Si and (111) GaAs/Si substrates. A combination of molecular beam epitaxy and metal organic chemical vapor deposition have been employed to achieve this growth. The GaAs layers are grown in Si substrates by molecular beam epitaxy, followed by the growth of CdTe on GaAs/Si substra by metalorganic chemical vapor deposition. X-ray diffraction, photoluminescence, and scanning electron microscopy have been used to characterize the CdTe films.
Document ID
19900057802
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Radhakrishnan, G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nouhi, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Liu, J.
(JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1988
Subject Category
Solid-State Physics
Meeting Information
Meeting: Micro-Optoelectronic Materials
Location: Los Angeles, CA
Country: United States
Start Date: January 13, 1988
End Date: January 14, 1988
Accession Number
90A44857
Distribution Limits
Public
Copyright
Other

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