Study of indium tin oxide films exposed to atomic axygenA qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.
Document ID
19900058138
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Snyder, Paul G. (Nebraska Univ. Lincoln, NE, United States)
De, Bhola N. (Nebraska Univ. Lincoln, NE, United States)
Woollam, John A. (Nebraska, University Lincoln, United States)
Coutts, T. J. (Nebraska Univ. Lincoln, NE, United States)
Li, X. (Solar Energy Research Institute Golden, CO, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Subject Category
Solid-State Physics
Meeting Information
Meeting: Space Optical Materials and Space Qualification of Optics