NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Si-Ge-metal ternary phase diagram calculationsSolution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process).
Document ID
19900061520
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Fleurial, J. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Borshchevsky, A.
(JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
September 1, 1990
Publication Information
Publication: Electrochemical Society, Journal
Volume: 137
ISSN: 0013-4651
Subject Category
Nonmetallic Materials
Accession Number
90A48575
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available