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Formation Of Ohmic Gold Contacts On Epitaxial GaAsNew low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.
Document ID
19910000117
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hecht, Michael H.
(Caltech)
Bell, L. Doug
(Caltech)
Kaiser, William J.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
March 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 3
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-17795
Accession Number
91B10117
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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