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Coating Solar Cells By Microwave Plasma DepositionAntireflection films deposited on silicon solar cells at high production rates with microwave-enhanced plasma deposition. Microwave energy at frequency of 2.45 GHz generates plasma in mixture of gases, from which thin film of silicon nitride deposits on silicon substrates. Reaction temperature relatively low (only 250 degrees C), and film deposition rate more than 500 Angstrom/minute - 2 to 5 times faster. Quality of antireflection film similar to that produced by chemical-vapor deposition. Uses less power and consumes smaller quantities of gas. Species formed in plasma longer lived and dissociate reactants in region of chamber well away from plasma-generation region.
Document ID
19910000220
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Minaee, Behrooz
(Superwave Technology, Inc.)
Chitre, Sanjeev R.
(Superwave Technology, Inc.)
Zahedi, Narges
(Superwave Technology, Inc.)
Date Acquired
August 14, 2013
Publication Date
May 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 5
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-17035
Accession Number
91B10220
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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