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Growing Cobalt Silicide Columns In SiliconCodeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).
Document ID
19910000287
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Fathauer, Obert W.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
June 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 6
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-17835
Accession Number
91B10287
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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