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Preventing Chemical-Vapor Deposition In Selected AreasMethod for prevention of chemical-vapor deposition of material in selected areas developed. Gas shroud isolates specific area from rest of deposition system. Inert gas flowing from beneath substrate prevents deposition between substrate and outer ring. Method extremely successful in selective deposition of SiC in chemical-vapor-deposition reactor. Used in deposition of SiC mirror blanks in Large Mirror Substrate and Lidar Mirror programs. Critical element in overall chemical-vapor-deposition process for producing large, lightweight mirrors.
Document ID
19910000289
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Keeley, Joseph T. (Morton International, Inc.)
Goela, Jitendra Singh (Morton International, Inc.)
Pickering, Michael A. (Morton International, Inc.)
Taylor, Raymond L. (Morton International, Inc.)
Date Acquired
August 14, 2013
Publication Date
June 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 6
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LAR-14300
Accession Number
91B10289
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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