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Multiple-Bit Errors Caused By Single IonsReport describes experimental and computer-simulation study of multiple-bit errors caused by impingement of single energetic ions on 256-Kb dynamic random-access memory (DRAM) integrated circuit. Studies illustrate effects of different mechanisms for transport of charge from ion tracks to various elements of integrated circuits. Shows multiple-bit errors occur in two different types of clusters about ion tracks causing them.
Document ID
19910000305
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Zoutendyk, John A. (Caltech)
Edmonds, Larry D. (Caltech)
Smith, Laurence S. (Caltech)
Date Acquired
August 14, 2013
Publication Date
July 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 7
ISSN: 0145-319X
Subject Category
Electronic Systems
Report/Patent Number
NPO-18075
Accession Number
91B10305
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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