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Driver Circuit For High-Power MOSFET'sDriver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.
Document ID
19910000569
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Letzer, Kevin A.
(Rockwell International Corp.)
Date Acquired
August 14, 2013
Publication Date
November 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 11
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LEW-15089
Accession Number
91B10569
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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