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Si/IrSi3 Schottky-Barrier Infrared DetectorsSi/IrSi or Si/IrSi3 Schottky-barrier detector fabricated by stoichiometric codeposition of Ir and Si on p Si substrate. Includes p+ substrate contact, silicide electrode, and n Si guard ring, which suppresses leakage around periphery of silicide electrode. Part of continuing effort to develop imaging arrays of Schottky-barrier detectors operating at far-infrared wavelengths.
Document ID
19910000623
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Lin, True-Lon
(Caltech)
Date Acquired
August 14, 2013
Publication Date
December 1, 1991
Publication Information
Publication: NASA Tech Briefs
Volume: 15
Issue: 12
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18027
NPO-17946
Accession Number
91B10623
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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