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Impact ionization in the base of a hot-electron AlSb/InAs bipolar transistorThe operation of a new AlSb/InAs heterojunction bipolar transistor is studied. The electrons are injected into a p-InAs base across the AlSb/InAs heterojunction. The conduction-band discontinuity at this heterojunction is sufficiently large so that energy of the electrons injected into InAs exceeds the threshold for generating electron-hole pairs by impact ionization. The observed incremental common base current at zero collector-base bias decreases and becomes negative as the emitter current is increased, thus providing direct evidence for impact ionization entirely by band-edge discontinuities.
Document ID
19910027645
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Vengurlekar, Arvind S.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Capasso, Federico
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Chiu, T. Heng
(AT&T Bell Laboratories Holmdel, NJ, United States)
Date Acquired
August 14, 2013
Publication Date
October 22, 1990
Publication Information
Publication: Applied Physics Letters
Volume: 57
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Accession Number
91A12268
Funding Number(s)
CONTRACT_GRANT: NAS5-29488
Distribution Limits
Public
Copyright
Other

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