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Micromachined silicon tunnel sensor for motion detectionThe extreme sensitivity of electron tunneling to variations in electrode separation has been used to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals, including a folded cantilever spring and a tip. Measurements of displacement sensitivity and noise are reported. This device offers a substantial improvement over conventional technology for applications which require compact, highly sensitive transducers.
Document ID
19910035877
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kenny, T. W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Waltman, S. B.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Reynolds, J. K.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kaiser, W. J.
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
January 7, 1991
Publication Information
Publication: Applied Physics Letters
Volume: 58
ISSN: 0003-6951
Subject Category
Instrumentation And Photography
Accession Number
91A20500
Distribution Limits
Public
Copyright
Other

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