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Ground based preparation for microgravity growth of alloy semiconductorsGround-based research conducted in order to prepare a microgravity space flight experiment is presented. The thermophysical properties of a PbSnTe alloy used for semiconductors are investigated, and furnace calibration and fluid-flow measurements are performed. The alloy has a zero energy crossing at approximately 40 percent SnTe in its band-gap vs composition diagram, which facilitates the design of long-wavelength IR detectors and lasers. The uniformity of devices made from this material depends on the ratio of PbTe and SnTe and requires the composition of the crystal growth to be closely controlled. The main obstacle to such control is the fact that liquid of this material is always solutally or thermally unstable, and, in a high-temperature gradient, the double convective instability cannot be made stable by balancing thermal and solutal expansion. In order to extend the science of crystal growth, the limits of suppression of convection have to be tested in low earth orbit.
Document ID
19910036891
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Fripp, Archibald L.
(NASA Langley Research Center Hampton, VA, United States)
Debnam, W. J.
(NASA Langley Research Center Hampton, VA, United States)
Crouch, R. K.
(NASA Langley Research Center Hampton, VA, United States)
Simchick, R. T.
(NASA Langley Research Center Hampton, VA, United States)
Sorokach, S. K.
(NASA Langley Research Center Hampton, VA, United States)
Rosch, W.
(NASA Langley Research Center Hampton, VA, United States)
Knuteson, D. J.
(NASA Langley Research Center Hampton, VA, United States)
Barber, P. G.
(NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Materials Processing
Report/Patent Number
AIAA PAPER 91-0511
Accession Number
91A21514
Distribution Limits
Public
Copyright
Other

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