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Three-dimensional modelling of horizontal chemical vapor deposition. I - MOCVD at atmospheric pressureA systematic numerical study of the MOCVD of GaAs from trimethylgallium and arsine in hydrogen or nitrogen carrier gas at atmospheric pressure is reported. Three-dimensional effects are explored for CVD reactors with large and small cross-sectional aspect ratios, and the effects on growth rate uniformity of tilting the susceptor are investigated for various input flow rates. It is found that, for light carrier gases, thermal diffusion must be included in the model. Buoyancy-driven three-dimensional flow effects can greatly influence the growth rate distribution through the reactor. The importance of the proper design of the lateral thermal boundary conditions for obtaining layers of uniform thickness is emphasized.
Document ID
19910037516
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ouazzani, Jalil
(Alabama Univ. Huntsville, AL, United States)
Rosenberger, Franz
(Alabama, University Huntsville, United States)
Date Acquired
August 15, 2013
Publication Date
March 1, 1990
Publication Information
Publication: Journal of Crystal Growth
Volume: 100
Issue: 3 Ma
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
91A22139
Funding Number(s)
CONTRACT_GRANT: NAG8-704
Distribution Limits
Public
Copyright
Other

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