NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Relative populations of excited levels within the ground configuration of Si-like Cu, Zn, Ge and Se ionsPopulations of 3p2 1D2, 3P1, 3P2 levels in Si-like Cu, Zn, Ge, and Se ions have been deduced from the measurements of absolute intensities of magnetic dipole transitions within the 3s2 3p2 ground configuration. The measured population ratios are compared with theoretical calculations based on the distorted-wave approximation for the electron collisions and a semiclassical approximation for the proton collisions. The observed deviation from the statistical distribution for the excited-level populations within the ground configuration along the silicon isoelectronic sequence is in agreement with theoretical prediction.
Document ID
19910038535
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Datla, R. U.
(National Inst. of Standards and Technology Gaithersburg, MD, United States)
Roberts, J. R.
(NIST Gaithersburg, MD, United States)
Bhatia, A. K.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 15, 2013
Publication Date
January 15, 1991
Publication Information
Publication: Physical Review A
Volume: 43
ISSN: 1050-2947
Subject Category
Atomic And Molecular Physics
Accession Number
91A23158
Funding Number(s)
CONTRACT_GRANT: DE-EA-77-A-01-6010
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available