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A model for the spectral dependence of optically induced absorption in amorphous siliconA model based on transitions from localized band tail states to states above the mobility edge is used to explain the broad band induced absorptions observed in recent pump-probe experiments. The model gives the observed decrease of absorption with frequency at subband gap photo energies and high carrier densities (of about 10 to the 20th/cu cm). At lower carrier densities, the absorption has a maximun which is sensitive to the spatial extent of the band tail states.
Document ID
19910038780
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Lawandy, N. M.
(Brown University Providence, RI, United States)
Date Acquired
August 15, 2013
Publication Date
September 15, 1990
Publication Information
Publication: Optics Communications
Volume: 78
ISSN: 0030-4018
Subject Category
Solid-State Physics
Accession Number
91A23403
Funding Number(s)
CONTRACT_GRANT: NAG5-526
Distribution Limits
Public
Copyright
Other

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