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High-voltage picosecond photoconductor switch based on low-temperature-grown GaAsA GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT) GaAs. A 150-fs laser pulse was used to generate carriers in the LT GaAs gap between the metal strips, partially shorting a high DC voltage placed across the lines. The 6-V magnitude of the electrical pulses obtained is believed to be limited by the laser pulse power and not by the properties of the LT GaAs. Experiments were also performed on a picosecond photoconductor switch fabricated on a conventional ion-damaged silicon-on-sapphire substrate. Although comparable pulse durations were obtained, the highest pulse voltage achieved with the latter device was 0.6 V.
Document ID
19910040436
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Frankel, Michael Y.
(Michigan Univ. Ann Arbor, MI, United States)
Whitaker, John F.
(Michigan Univ. Ann Arbor, MI, United States)
Mourou, Gerard A.
(Michigan, University Ann Arbor, United States)
Smith, Frank W.
(Michigan Univ. Ann Arbor, MI, United States)
Calawa, Arthur R.
(MIT Lexington, MA, United States)
Date Acquired
August 14, 2013
Publication Date
December 1, 1990
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: 37
ISSN: 0018-9383
Subject Category
Electronics And Electrical Engineering
Accession Number
91A25059
Funding Number(s)
CONTRACT_GRANT: DAAL03-89-K-0071
CONTRACT_GRANT: F49620-87-C-0016
CONTRACT_GRANT: NCC3-130
Distribution Limits
Public
Copyright
Other

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