Design parameters of a resonant infrared photoconductor with unity quantum efficiency

This paper proposes a concept of a resonant infrared photoconductor that has characteristics of 100 percent quantum efficiency, high photoconductive gain, and very low noise equivalent power. Central to this concept is an establishment of a high-finesse absorption cavity internal to the detector element. A theoretical analysis is carried out, demonstrating this concept and providing some design guidelines. A Ge:Ga FIR detector is presently being fabricated using this approach.