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MOCVD of GaAs in a horizontal reactor - Modeling and growthA two-dimensional model for metalorganic chemical vapor deposition of GaAs in a horizontal reactor is presented. The model is characterized by the following parameters: reactor geometry and operating pressure, thermal boundary conditions, ratio of reactants, chemical reactions, total inlet gas flow rate, as well as molecular weights, thermal conductivities, heat capacities, viscosities, and binary diffusion coefficients of the gas-phase species. Film thickness profiles predicted by the model are compared with those of GaAs thin films grown in the modeled reactor. Results obtained show a good agreement between the predictions and data over the entire length of the deposition region for the low pressure and high flow rate run. Attention is also given to the reactor design and growth conditions.
Document ID
19910051328
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Clark, Ivan O.
(NASA Langley Research Center Hampton, VA, United States)
Fox, Bradley A.
(NASA Langley Research Center Hampton, VA, United States)
Jesser, William A.
(Virginia, University Charlottesville, United States)
Black, Linda R.
(NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Publication Information
Publication: Journal of Crystal Growth
Volume: 109
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
91A35951
Distribution Limits
Public
Copyright
Other

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