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Peeled film GaAs solar cell developmentThin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.
Document ID
19910057266
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Wilt, D. M.
(NASA Lewis Research Center Cleveland, OH, United States)
Thomas, R. D.
(NASA Lewis Research Center Cleveland, OH, United States)
Bailey, S. G.
(NASA Lewis Research Center Cleveland, OH, United States)
Brinker, D. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Deangelo, F. L.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Kissimmee, FL
Country: United States
Start Date: May 21, 1990
End Date: May 25, 1990
Accession Number
91A41889
Distribution Limits
Public
Copyright
Other

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