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Surface recombination velocity and lifetime in InP measured by transient microwave reflectanceMinority carrier lifetime and surface recombination velocity are determined in organometallic vapor-phase epitaxy (OMVPE)-grown InP by a contactless microwave technique. For lightly doped n-type InP, a surface recombination velocity of 5000 cm/s is measured. However, in solar cells with a heavily doped n-type emitter a surface recombination velocity of 1 x 10 to the 6th cm/s is observed. Possible reasons for this due to surface pinning are discussed. The effects of various chemical treatments and SiO on the surface recombination velocity are measured.
Document ID
19910057309
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bothra, S.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Tyagi, S. D.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Ghandhi, S. K.
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Borrego, J. M.
(Rensselaer Polytechnic Institute, Troy, NY, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Solid-State Physics
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Kissimmee, FL
Country: United States
Start Date: May 21, 1990
End Date: May 25, 1990
Accession Number
91A41932
Funding Number(s)
CONTRACT_GRANT: NAG3-604
Distribution Limits
Public
Copyright
Other

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