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1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cellsA comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.
Document ID
19910057394
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Abdulaziz, Salman
(Wayne State Univ. Detroit, MI, United States)
Payson, J. S.
(Wayne State Univ. Detroit, MI, United States)
Li, Yang
(Wayne State Univ. Detroit, MI, United States)
Woodyard, James R.
(Wayne State University Detroit, MI, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Kissimmee, FL
Country: United States
Start Date: May 21, 1990
End Date: May 25, 1990
Accession Number
91A42017
Funding Number(s)
CONTRACT_GRANT: NAG3-833
Distribution Limits
Public
Copyright
Other

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