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Silicon carbon alloy thin film depositions using electron cyclotron resonance microwave plasmasAmorphous and microcrystalline silicon carbon films (a-SiC:H, micro-c-SiC:H) have been deposited using SiH4, CH4 and H2 mixed gas ECR (electron cyclotron resonance) plasmas. The optical bandgap of a-SiC:H films is not dependent on the hydrogen dilution in the ECR plasma. The deposition rate of a-SiC:H films is found to be strongly dependent on the ECR magnetic field and the hydrogen dilution. The hydrogen dilution effect on the deposition rate indicates that the etching in ECR hydrogen plasmas plays an important role in the deposition of a-SiC:H films. The optical constants n and k of ECR-deposited a-SiC:H films in the wavelength region of 0.4 to 1.0 micron are determined to be 2.03-1.90 and 0.04-0.00, respectively. The microstructures of ECR-deposited micro-c-SiC:H films are shown by X-ray diffraction and SEM (scanning electron microscopy) to be composed of 1000-A alpha-SiC microcrystallites and amorphous network structures.
Document ID
19910057400
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Shing, Y. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Pool, F. S.
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Solid-State Physics
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: Kissimmee, FL
Country: United States
Start Date: May 21, 1990
End Date: May 25, 1990
Accession Number
91A42023
Distribution Limits
Public
Copyright
Other

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