Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switchesExperimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.
Document ID
19910067797
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Schwarze, G. E. (NASA Lewis Research Center Cleveland, OH, United States)
Frasca, A. J. (Wittenberg University Springfield, OH, United States)