New materials and techniques for improved mm wave devicesCurrent research on microwave and mm wave three terminal semiconductor devices is summarized with particular attention given to the development of the pseudomorphic InGaAs modulation-doped field effect transistor (MODFET). Application of the high-indium-concentration MODFET grown on InP in the temperature range of 120-150 K is also described.
Document ID
19910067836
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Alterovitz, Samuel A. (NASA Lewis Research Center Cleveland, OH, United States)