NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structureLarge optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.
Document ID
19910070930
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Larsson, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maserjian, J.
(JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
October 14, 1991
Publication Information
Publication: Applied Physics Letters
Volume: 59
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
91A55553
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available