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FET's Perform Well At Cryogenic TemperaturesNew metal-oxide-semiconductor field-effect transistors designed for source-follower preamplifiers operating at liquid-helium temperatures in conjunction with infrared detectors. Lower thresholds and offset give CryoFET's greater dynamic range and linearity than conventional MOSFET's at low temperatures and facilitates pair balancing to reduce offsets in output. Reduces heat loading of cryogenic system, extending life, reliability, and performance of cryogenic infrared instruments.
Document ID
19920000069
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Sclar, N.
(Rockwell International Corp.)
Date Acquired
August 15, 2013
Publication Date
February 1, 1992
Publication Information
Publication: NASA Tech Briefs
Volume: 16
Issue: 2
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
ARC-11456
Accession Number
92B10069
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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