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Infrared Multiple-Quantum-Well PhototransistorProposed npn AlxGa1-xAs phototransistor incorporates multiple-quantum-well (MQW) infrared photodetector. Has n-doped contacts and is embedded between p-doped base region and n-doped collector region of transistor. Photocurrent amplified, and dark current suppressed.
Document ID
19920000201
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Borenstain, Shmuel I. (Caltech)
Date Acquired
August 15, 2013
Publication Date
April 1, 1992
Publication Information
Publication: NASA Tech Briefs
Volume: 16
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17980
Accession Number
92B10201
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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