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Barrier/n/n+ Varactor Frequency MultipliersBarrier/n/n+ (BNN+) varactor diodes developed as frequency multipliers at millimeter and submillimeter wavelengths. Devices required to serve as frequency triplers or quintuplers to provide powers of order of milliwatts at frequencies from 0.1 THz to about 1 THz. Feature Mott or heterojunction barriers and back-to-back diode configuration, which make it possible to obtain symmetrical capacitance-versus-voltage characteristics with high ratio between maximum and minimum capacitances. Extension of barrier/intrinsic/n+ (BIN+) concept described in "BIN Diode for Submillimeter Wavelengths" (NPO-17258).
Document ID
19920000446
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Lieneweg, Udo
(Caltech)
Tolmunen, Timo J.
(Caltech)
Frerking, Margaret A.
(Caltech)
Maserjian, Joseph
(Caltech)
Date Acquired
August 15, 2013
Publication Date
August 1, 1992
Publication Information
Publication: NASA Tech Briefs
Volume: 16
Issue: 8
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-18428
Accession Number
92B10446
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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