Mass-Transport Properties In Growth Of Crystals From Vapors

Brief report summarizes results of experimental and theoretical studies of mass-transport properties of GeSe/Gel4 and Hg0.8Cd0.2Te systems in connection with growth of crystals in closed ampoules. Primary emphasis in studies was on thermochemical analyses, on development of mathematical models to predict diffusion-limited mass transport, and on comparison of theoretically predicted with experimental fluxes. Results applied to design, preparation, performance, and analysis of crystal-growth experiments of semiconducting materials on Earth and in outer space. Model extended to predict mass flux and overall composition of transport products of Hg0.8Cd0.2Te transport system.