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A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodesA theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes is presented. The model describes the traps and the trap characteristics: concentration, energy level, and capture cross sections. We have observed that the above two types of diodes differ in the voltage dependence of the trap-assisted tunneling current and dynamic resistance. Our model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated DC characteristics of the photodiodes (for medium and high reverse bias and for temperatures from 65 to 140 K) supports the validity of the model.
Document ID
19920023735
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Rosenfeld, David
(Technion - Israel Inst. of Tech. Haifa, Israel)
Bahir, Gad
(Technion - Israel Inst. of Tech. Haifa, Israel)
Date Acquired
September 6, 2013
Publication Date
August 1, 1992
Publication Information
Publication: NASA. Lewis Research Center, Solid State Technology Branch of NASA Lewis Research Center
Subject Category
Solid-State Physics
Accession Number
92N32979
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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