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High-power single-element pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for pumping Er-doped fiber amplifiersA 980-nm-ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well laser with a maximum single-ended output power of 240 mW from a facet-coated device is fabricated from a graded-index separate-confinement heterostructure grown by molecular-beam epitaxy. The laser oscillates in the fundamental spatial mode, allowing 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. Life testing at an output power of 30 mW per facet from uncoated devices reveals a superior reliability to GaAs/AlGaAs quantum-well lasers but also the need for protective facet coatings for long term reliability at power levels required for pumping Er-doped fiber amplifiers.
Document ID
19920035623
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Larsson, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Forouhar, S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Cody, J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lang, R. J.
(JPL Pasadena, CA, United States)
Andrekson, P. A.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1991
Subject Category
Lasers And Masers
Meeting Information
Meeting: Laser Diode Technology and Applications III
Location: Los Angeles, CA
Country: United States
Start Date: January 23, 1991
End Date: January 25, 1991
Accession Number
92A18247
Distribution Limits
Public
Copyright
Other

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