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Bench-level characterization of a CMOS standard-cell D-latch using alpha-particle sensitive test circuitsA methodology is described for predicting the SEU susceptibility of a standard-cell D-latch using an alpha-particle sensitive SRAM, SPICE critical charge simulation results, and alpha-particle interaction physics. Measurements were made on a 1.6-micron n-well CMOS 4-kb test SRAM irradiated with an Am-241 alpha-particle source. A collection depth of 6.09 micron was determined using these results and TRIM computer code. Using this collection depth and SPICE derived critical charge results on the latch design, an LET threshold of 34 MeV sq cm/mg was predicted. Heavy ion tests were then performed on the latch and an LET threshold of 41 MeV sq cm/mg was determined.
Document ID
19920041433
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Blaes, B. R.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Soli, G. A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Buehler, M. G.
(JPL Pasadena, CA, United States)
Date Acquired
August 15, 2013
Publication Date
December 1, 1991
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 38
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
92A24057
Distribution Limits
Public
Copyright
Other

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