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Tunnel injection transit-time diodes for W-band power generationGaAs p(+ +)n(+)n(-)n(+) single-drift tunnel injection transit-time (TUNNETT) diodes for W-band operation have been successfully designed and tested. An output power of 32 mW at 93.5 GHz with a dc to RF conversion efficiency of 2.6 percent was obtained. The oscillations have a clean spectrum in a conventional waveguide cavity.
Document ID
19920046389
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kidner, C.
(NASA Headquarters Washington, DC United States)
Eisele, H.
(NASA Headquarters Washington, DC United States)
Haddad, G. I.
(Michigan, University Ann Arbor, United States)
Date Acquired
August 15, 2013
Publication Date
February 27, 1992
Publication Information
Publication: Electronics Letters
Volume: 28
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Accession Number
92A29013
Funding Number(s)
CONTRACT_GRANT: NAGW-1334
Distribution Limits
Public
Copyright
Other

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